team

Кафадарян Евгения Артемовна

к.ф.-м.н., доцент

Описание

ОБРАЗОВАНИЕ:
1968-1972– аспирантка Московского государственного университета им. М. В. Ломоносова, Россия
1961-1966 Ереванский Государственный Университет, Степень Магистра, Физика.

РАБОЧИЙ СТАЖ:
2017 - по сей день, Ведущий научный сотрудник Института физических исследований НАН Армении
2006 – по сей день,доцент кафедры квантовой и оптической электроники Российско-Армянского (Славянский) Университета.
1992-2017 - старший научный сотрудник Института физических исследований АН Армении
1974-1992– научный сотрудник Института физических исследований АН Армении
1966-1968– младший научный сотрудник Института энергетики Армении

Читаемые дисциплины:
1. Методы исследования материалов и структур электроники;
2. .Качественно новые элементы компьютерной памяти.

РУКОВОДИТЕЛЬ ГРАНТА:
Завершенные

2002–2004Principle Investigator of theNFSAT award,Study of Electrode-Induced Interface in Substrate-Electrode-PbZr1-xTixO3 Heterostructures.PH 102-02.2002 BILATERAL GRANTS PROGRAM, Category A  https://www.nap.edu/read/11107/chapter/12

2008-2009 - Principle Investigator of the ANSEF (the Armenian National Science and Education Fund) Award
Integration of ferroelectric oxides with lanthanum hexaboride in order to create electron emitters. http://ansef.org/past-awards/2008/1/1/the-2008-ansef-awards.html
2009-2010  - Principle Investigator of the ANSEF (the Armenian National Science and Education Fund) Award 2009, 
Development of metal oxide/lanthanum hexaboride cold cathodes. http://ansef.org/past-awards/2009/1/1/the-2009-armen-avanessians-ansef-awards.html
2013-2014Principle Investigator of the ANSEF (the Armenian National Science and Education Fund) Development of a field effect transistor based on lab6/la2o3 structure. https://static1.squarespace.com/static/55f6af18e4b0b65087bf4743/t/56166703e4b0803de628292d/1444308739304/awards2013.pdf
2015-2016 Principle Investigator of the ANSEF (the Armenian National Science and Education Fund) Conduction and reversible memory phenomena in memristive device based on ZnO/LaB6 structures, Grant 3913-PS-condmatex.
 

Научные интересы

  • Физика твердого тела, физика полупроводников, нанотехнологии, кристаллография, сегнетоэлектричество, оптическая спектроскопия, физика тонких пленок, мемристоры, поляроны, элементы памяти.

Список основных публикаций

  • Y. Kafadaryan, • N. Aghamalyan, • A. Arakelyan, • S. Petrosyan, G. Badalyan, A. Poghosyan, R. Hovsepyan, Experimental evidence of polarons in silver doped ZnO films, Applied Physics A,127 (2021) 128; DOI: 10.1007/s00339-020-04231-9
  • A. Igityan, N. Aghamalyan, R. Hovsepyan, S. Petrosyan, G. Badalyan, I. Gambaryan, A. Papikyan, and Y. Kafadaryan, Negative Differential Conductivity of Lanthanum-Oxide-Based Structures, Semiconductors, 54(2) 163-168, (2020)
  • A Igityan, N Aghamalyan, S Petrosyan, G Badalyan, Y Kafadaryan, Resistive Switching in Li‐Doped ZnO Films, physica status solidi (a) 215 (1) (2018).
  • A Igityan, N Aghamalyan, S Petrosyan, I Gambaryan, G Badalyan, Y Kafadaryan, Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation, Applied Physics A 123 (6), 448 (2017).
  • Y Kafadaryan, A Igityan, N Aghamalyan, S Petrosyan, I Gambaryan, Bipolar resistance switching characteristics of Ag/ZnO: Li/SnO2: F device on glass, Thin Solid Films 616, 815-819 (2016).
  • A Igityan, Y Kafadaryan, N Aghamalyan, S Petrosyan, G Badalyan, V Vardanyan, M Nersisyan, R Hovsepyan, A Palagushkin, B Kryzhanovsky, Resistivity switching properties of Li-doped ZnO films deposited on LaB6 electrode, Thin Solid Films595, 92-95 (2015).
  • A Igityan, Y Kafadaryan, N Aghamalyan, S Petrosyan, G Badalyan, R Hovsepyan, I Gambaryan, A Eganyan, H Semerjian, A Kuzanyan, Structural and electrical characteristics of lanthanum oxide formed on surface of LaB6 film by annealing, Thin Solid Films 564, 415-418 (2014).
  • E. A. Kafadaryan, S Levichev, S R C Pinto, N.R.Aghamalyan, R K Hovsepyan, G R Badalyan, A Chahboun, A G Rolo, M J M Gomes, Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO2 matrix. Semicond. Sci. Technol. 23,095025 (2008).
  • N R Aghamalyan, E AKafadaryan, R K Hovsepyan and S I Petrosyan, Absorption and reflection analysis of transparent conductive Ga-doped ZnO films, Semiconductor Science and Technology 20 (1), 80-85 (2005).
  • Xiaojie Lou, Xiaobing Hu, Ming Zhang, S.A.T. Redfern, Y. Kafadaryan, J.F. Scott , Nanoshort, Rev. Adv. Mater. Sci 10, 197 (2005).
  • Chapter in a book:NR Aghamalyan, EA Kafadaryan, R K Hovsepyan, Trends in Semiconductor Science 81-110 (2005), chapter 4 , Effect of lithium and gallium impurities on opto-electrical properties of ZnO films, Edited by Thomas B. Elliot, Nova science publishers, New York.

Дисциплины